Carrier trapping and escape times in p-i-n GaInNAs MQW structures
نویسندگان
چکیده
We used a semi-classical model to describe carrier capture into and thermionic escape from GaInNAs/GaAs multiple quantum wells (MQWs) situated within the intrinsic region of a GaAs p-i-n junction. The results are used to explain photocurrent oscillations with applied bias observed in these structures, in terms of charge accumulation and resonance tunnelling.
منابع مشابه
Photoconductivity and photoluminescence under bias in GaInNAs/GaAs MQW p-i-n structures
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